Mersen: leading the way in cutting-edge semiconductors

Epitaxy is a sophisticated manufacturing process that involves the precise deposition of crystalline layers onto a substrate to form semiconductor devices. This method is crucial for creating a layered structure where each layer's atomic arrangement mirrors that of the substrate beneath it. Two key aspects of this process are the precise control of temperature and the use of specific silicon-based compounds.

Precise temperature control

Epitaxy is a high-temperature process, and maintaining exact temperature control within the epitaxy reactors is crucial. The quality of the crystalline layers and, consequently, the performance of the semiconductor devices depend significantly on this precise temperature management. Mersen's advanced graphite solutions play a vital role here, offering exceptional thermal stability that helps maintain consistent temperatures throughout the process.

Use of silicon-based compounds

The epitaxial growth process typically involves silicon-based compounds such as silicon (Si), silicon-germanium (SiGe), and silicon phosphorus (SiP). These materials are selected based on their ability to tailor the electronic characteristics of each layer, which is essential for the functionality of devices like integrated circuits. The choice of materials directly influences the electrical and physical properties of the semiconductor devices, making the selection process integral to semiconductor manufacturing.

Enhancing silicon wafer manufacturing is key to meeting the growing demands of the industry. With advancements in technology, there are several ways to improve the quality, efficiency, and performance of semiconductor wafers.

Improving quality and efficiency in silicon wafer manufacturing

Improving the quality and efficiency in silicon wafer manufacturing involves optimizing various processes, from the purity of materials to the precision of manufacturing techniques. Utilizing high-purity materials is crucial, as impurities can significantly impact the performance of the semiconductor. Additionally, refining manufacturing processes to increase yield and reduce defects is essential. This includes controlling environmental factors such as temperature and contamination, and employing advanced techniques for silicon crystal growth and wafer slicing.

High temp purification of graphite

The purification of graphite involves heating graphite to very high temperatures to remove impurities and enhance its properties. Purified graphite is essential in various stages of semiconductor manufacturing, such as in crucibles for silicon crystal growth and as components in high-temperature furnaces. The purity of graphite directly affects the quality of the semiconductor wafers produced.

Protecting graphite with SiC coating and TaC coating

Protecting graphite components in semiconductor manufacturing is essential due to graphite's susceptibility to oxidation at high temperatures. Applying Silicon Carbide (SiC) and Tantalum Carbide (TaC) coatings to graphite parts enhances their durability and resistance to harsh environments. TaC and SiC coatings protect the graphite from erosion and contamination, thereby extending its lifespan and maintaining the purity required for semiconductor manufacturing processes.

Elevating silicon crystal properties through epitaxy

Epitaxy is a process used to grow crystalline layers on a substrate wafer, and it plays a crucial role in defining the properties of silicon crystals. Elevating silicon crystal properties through epitaxy involves precise control over the deposition of these layers. This control is essential for tailoring the electrical properties of the semiconductor, such as doping concentration and layer thickness. Advanced epitaxy techniques enable the production of semiconductor wafers with superior electronic properties.

Enhancing ALD processes with graphite susceptor

Atomic Layer Deposition (ALD) is a technique used to deposit thin films on wafers with extreme precision. Enhancing ALD processes can be achieved by using graphite susceptors. These susceptors, made of high-purity graphite, provide uniform heating and excellent thermal stability, which are crucial for the ALD process. The use of graphite susceptors ensures consistent film quality and thickness.

Advancing SiC epitaxial layering for enhanced performance

Silicon carbide (SiC) epitaxial layering is a process that significantly enhances the performance of semiconductor devices. SiC offers superior electrical properties, such as higher breakdown electric field strength and thermal conductivity, compared to traditional silicon. Advancing SiC epitaxial layering involves perfecting the deposition of thin SiC layers on substrate wafers, ensuring uniformity and minimizing defects. This advancement is crucial for high-power and high-frequency semiconductor applications.

Manufacturing silicon carbide (SiC) semiconductor involves various sophisticated techniques, each contributing uniquely to the development of high-quality SiC materials used in semiconductors.

Physical Vapor Transport (PVT) method

The Physical Vapor Transport (PVT) method is the cornerstone process for manufacturing SiC crystals, widely recognized for its role in producing high-quality silicon carbide. Utilizing a temperature gradient, PVT facilitates the sublimation and deposition of SiC vapor onto a seed crystal, resulting in large, pure crystals with exceptional structural integrity.

Top-seeded solution growth (TSSG)

Top-Seeded Solution Growth (TSSG) is a method where a seed crystal of silicon carbide is placed at the top of a solution containing silicon and carbon. As the solution is cooled, silicon carbide crystallizes on the seed, allowing for the growth of large, high-quality crystals. This technique is known for producing SiC with fewer defects and high purity.

Solution growth on a concave surface (SGCS)

Solution Growth on a Concave Surface (SGCS) involves growing silicon carbide crystals on a concave-shaped surface. This unique approach helps in managing the temperature gradients and solute distribution, leading to more uniform crystal growth. SGCS is beneficial for producing SiC crystals with consistent properties across the entire surface.

Melt-back

Melt-Back is a technique where existing silicon carbide crystals are partially melted and then allowed to recrystallize. This process helps in eliminating defects and impurities, resulting in a more uniform and pure silicon carbide crystal. It's particularly useful for improving the quality of pre-existing SiC materials.

Accelerated crucible rotation technique (ACRT)

The Accelerated Crucible Rotation Technique (ACRT) involves rotating the crucible during crystal growth. This rotation leads to a more homogenous temperature distribution and solute concentration, which are crucial for growing high-quality silicon carbide crystals with minimal defects.

Two-step growth

Two-Step Growth is a process where silicon carbide crystal growth is divided into two distinct phases. The first phase focuses on rapid growth, while the second phase slows down the growth rate to improve crystal quality. This method balances between growth efficiency and crystal perfection.

Facet growth

Facet Growth refers to a controlled process where specific crystallographic facets of silicon carbide are grown to achieve desired shapes and sizes. This technique is important for applications that require SiC crystals with specific orientations and geometries.

CVD Silicon Carbide or Solid SiC CVD

CVD Silicon Carbide involves depositing gaseous silicon and carbon compounds onto a substrate, where they react and form silicon carbide. CVD silicon carbide is a vapor chemical process. It is known for producing extremely pure and high-quality SiC materials, suitable for demanding applications.

SiC Coated with others materials

SiC coated is silicon carbide coated with other materials to enhance its properties. For example, a chemical vapor deposition (CVD) coating can be applied to create a non-porous, high-purity SiC coated surface. This technique is useful for applications requiring silicon carbide with specific surface characteristics.

Epitaxy 

Epitaxy is a process where a thin layer of silicon carbide is grown on a silicon carbide substrate. This technique is crucial for fabricating SiC semiconductors, as it allows for the creation of layers with precise electrical properties.

Epitaxy plays an innovative role in advanced semiconductor fabrication, enabling the precise control of material layers to create high-performance semiconductor devices.

How does Mersen's advanced materials contribute to epitaxial growth?

Mersen's advanced materials, including high-purity graphite, are essential in epitaxial growth processes. These materials provide the necessary stability and purity for the deposition of semiconductor layers. High-purity graphite, used in epitaxial reactor chambers, ensures a contaminant-free environment, crucial for the growth of defect-free epitaxial layers. 

How does silicon carbide (SiC) epitaxy enhance semiconductor performance?

Silicon carbide epitaxy enhances semiconductor performance by providing materials with superior electrical and thermal properties. SiC epitaxial layers are used in power semiconductors due to their high breakdown voltage, thermal conductivity, and ability to operate at higher temperatures. This results in semiconductors that are more efficient, durable, and capable of handling higher power densities, making them ideal for demanding applications like electric vehicles and renewable energy systems.

What is the impact of high-purity graphite in epitaxial processes?

High-purity graphite is essential in epitaxial processes for its inert nature and exceptional ability to withstand extremely high temperatures. This material is crucial in ensuring uniform heat distribution across epitaxial reactors, minimizing thermal gradients that can lead to defects in semiconductor layers. Furthermore, the use of purified graphite reduces the risk of contamination, a critical factor in maintaining the purity of the crystalline layers being deposited. By ensuring both thermal consistency and a contaminant-free environment, high-purity graphite significantly enhances the reliability and electrical properties of semiconductors.

What innovations in epitaxy contribute to improved energy efficiency?

Innovations in epitaxy, such as the development of new materials and processes, contribute significantly to improved energy efficiency in semiconductors. Advanced epitaxial techniques allow for the creation of layers with precise electrical characteristics, reducing power loss and improving the overall efficiency of semiconductor devices. 

How is Mersen shaping the development of next-generation epitaxial equipment?

Mersen is at the forefront of developing next-generation epitaxial equipment. By leveraging its expertise in advanced materials and semiconductor processes, Mersen is innovating new solutions that enhance the precision and efficiency of epitaxial growth. This includes the development of advanced graphite and SiC coated materials that significantly enhance the longevity of graphite.

How are epitaxial layers tailored for specific semiconductor applications?

Epitaxial layers are tailored for specific semiconductor applications by controlling their composition, thickness, and doping levels. This customization allows for the optimization of the layers' electrical properties, such as conductivity and charge carrier mobility, to suit specific applications. Whether for high-frequency devices, power electronics, or optoelectronics, the ability to tailor epitaxial layers is crucial for meeting the specific requirements of various semiconductor applications.

The evolution of epitaxy in semiconductor fabrication

Epitaxy has undergone significant evolution in semiconductor fabrication, becoming a cornerstone process for creating high-quality semiconductor devices. This technique involves the growth of a crystalline layer on a substrate wafer, where the layer's atomic structure matches that of the substrate. The evolution of epitaxy has led to more precise control over the thickness and composition of the layers, enabling the fabrication of complex semiconductor structures with enhanced electrical properties. Innovations in epitaxy, such as Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD), have allowed for the development of advanced semiconductor devices with applications in high-speed electronics.

High Purity of Mersen wafer carriers

The high purity of Mersen wafer carriers is essential for preventing contamination during the epitaxial growth process. Any impurities can significantly impact the quality of the semiconductor layers. Mersen's wafer carriers are made from materials, such as graphite, that minimize the risk of contamination, ensuring that the epitaxial layers maintain their desired electrical and physical properties.

Durability of Mersen wafer carriers

The epitaxial process is characterized by exposure to high temperatures, corrosive chemicals, and aggressive cleaning protocols such as in situ cleaning. It can degrade less robust materials. Mersen's carriers are constructed with silicon to withstand these harsh conditions, ensuring a longer lifespan and consistent performance. This durability reduces the need for frequent replacements, thereby lowering operational costs and enhancing the overall efficiency of the semiconductor manufacturing process.

Precision Engineering of Mersen wafer carriers

Precision engineering of wafer carriers is vital for maintaining the uniformity and alignment of wafers during epitaxy. Mersen's wafer carriers are designed with exact specifications to ensure that each wafer is held securely and consistently. This precision is crucial for achieving uniform epitaxial layers and minimizing defects. It is essential for the production of high-quality semiconductor devices. Additionally, the dimensional stability of these carriers under high temperatures and corrosive environments further ensures the integrity of wafer processing. This stability prevents warping or deformation, maintaining precise alignment and uniformity throughout the manufacturing process.

Thermal Stability of Mersen wafer carriers

Thermal stability is a critical feature of Mersen wafer carriers, especially given the high temperatures involved in epitaxial processes. These wafer carriers are engineered to maintain their structural integrity and dimensional stability under thermal stress. This stability is crucial for preventing warping or other deformations that could affect the epitaxial layer quality, ensuring consistent results in semiconductor fabrication.

Corrosion Resistance of Mersen wafer carriers

Corrosion resistance is an essential attribute of Mersen wafer carriers. The epitaxial process can involve exposure to corrosive gases and chemicals. Mersen's wafer carriers are made from isostatic graphite. Isostatic graphite resists corrosion, ensuring that they maintain their integrity and performance over time. This resistance is key to protecting the carriers from degradation, thereby ensuring the purity and quality of the epitaxial layers.